2 GBIT (256M × 8 BIT) CMOS NAND E2PROM - Organization Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes - Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read - Mode contro...

BiMOS General-purpose Operational Amplifier - Wide Bandwidth: 10 MHz - High Output Drive: IOH: 57 mA at VDD – 1.5 V IOL: 55 mA at 0.5 V - High Slew Rate: SR+: 16 V/?s SR–: 19 V/?s - Wide Supply Range: 4.5 V to 16 V - Supply Current: 1.9 mA/Channel - Ultralow Power Shutdown Mode: IDD: 125 ?A/Channel - Low Input Noise Voltag...

Programmable Logic Device ACEX 1K Family - Programmable logic devices (PLDs), providing low cost system-on-a-programmable-chip (SOPC) integration in a single device – Enhanced embedded array for implementing megafunctions such as efficient memory and specialized logic functions – Dual-port capability with up to 16-bit width per em...

Silicon NPN Triple Diffused Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Collector to base voltage VCBO: 200 V Collector to emitter voltage VCEO: 150 V Emitter to base voltage VEBO: 6 V Collector current IC: 2 A Collector peak current IC (peak): 5 A Collector power d...

Silicon NPN Triple Diffused - High voltage, high speed and high power switching - Collector to base voltage VCBO: 900 V - Collector to emitter voltage VCEO: 800 V - Emitter to base voltage VEBO: 7 V - Collector current IC: 3 A - Collector peak current IC(peak): 6 A - Base current IB: 1.5 A - Collector power dissipation PCtot...

N-Channel MOSFET for high speed high current applications, DC-DC converter, motor drive applications - Vdss = 900 V - Id = 5,00 A - Pmax = 125,0 W - Rdson = 1,900 Ohm Datenblatt: 2SK2039.pdf...