N-Channel Power MOSFET - BVDSS = 600 V - RDS(on) = 0.8 Ohm - ID = 5.1 A - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area Datenblatt: SSS10N60A.pdf...

P-Channel Power MOSFET - VDS (V) - 100 - RDS(on) VGS = - 10 V 0.20 Ohm - Qg (Max.) (nC) 61 - Qgs (nC) 14 - Qgd (nC) 29 - Dynamic dV/dt Rating - Repetitive Avalanche Rated - P-Channel - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Simple Drive Requirements Datenblatt: IRF9540.pdf...

4,194,304 WORD x 1 BIT DYNAMIC RAM, 60ns...

64 Kilobit (8,192 x 8-Bit) CMOS EPROM - Fast access time: 45 ns - Low power consumption 20 uA typical CMOS standby current - JEDEC-approved pinout - Single +5 V power supply - +-10% power supply tolerance available - 100% FlashriteTM programming - Typical programming time of 1 second - Latch-up protected to 100 mA from –1 V to...

8-Bit, Single Chip, NMOS Microcomputers with Universal PPI - 8 Bit Microcontroller - Speicher: 1K x 8 Eprom / 64 x 8 RAM - 8-Bit Timer/Counter - 18 I/O Lines - Interrupt, DMA or polled operation - Expandable I/O - Single +5V Power Supply...

Low Power MicroMonitor Chip - Threshold Voltage: 3.3 V to 5.5 V - Number of Inputs Monitored: 1 Input - Output Type: Active High, Active Low, Open Drain, Push-Pull - Manual Reset: Manual Reset - Watchdog Timers: Watchdog - Battery Backup Switching: No Backup - Reset Delay Time: 610 ms - Supply Voltage - Max: 5.5 V Datenb...