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Fax: +49 (0)3327 741719
Mail: info@tautec-electronics.de
Top sellers
Displaying 25 to 30 (of 1847 top sellers)
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newAdded: 01/16/2023Modified: 04/14/2026ISZ080N10NM6
OptiMOS(TM) 6 Power-Transistor, 100 V Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Contin...Price1.10 EUR excl. Tax -
newAdded: 08/13/2013Modified: 09/06/2022SMTPA200
Trisil™ For Telecom Equipment Protection Maximum Holding Current: 150 mA Peak Reverse Repetitive Voltage: 200 V Product Dimensions: 4.6 x 3.95 x 2.45 mm ...Price0.25 EUR excl. Tax -
newAdded: 03/26/2009Modified: 04/11/20192SK1530-Y(F)
Silicon N Channel MOSFET For High-Power Amplifier Application Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous ...Price8.00 EUR excl. Tax
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newAdded: 10/12/2020Modified: 08/25/2025GAL22V10D-25LPN
High Performance E2CMOS PLD Generic Array Logic™ Number of Macrocells: 10 Maximum Operating Frequency: 83.3 MHz Propagation Delay - Max: 25 ns Operating...Price9.20 EUR excl. Tax -
newAdded: 04/23/2013Modified: 01/29/2026MT29F16G08ABABAWP-AIT:B
16GB NAND Flash Memory Technology: FLASH - NAND Memory Size: 16Gbit Memory Organization: 2G x 8 Memory Interface: Parallel Timing Type: Asynchronous D...Price23.00 EUR excl. Tax -
newAdded: 01/25/2016Modified: 08/26/2024IRL1004PBF
HEXFET N-Channel Power MOSFETs, 40V / 130A / 6.5mOhm Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 4...Price0.75 EUR excl. Tax
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newAdded: 01/16/2023Modified: 04/14/2026Price1.10 EUR excl. Tax
ISZ080N10NM6
OptiMOS(TM) 6 Power-Transistor, 100 V Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 75 A Rds On - Drain-Source Resistance: 8.04 mOhms Vgs - Ga... -
newAdded: 08/13/2013Modified: 09/06/2022Price0.25 EUR excl. Tax
SMTPA200
Trisil™ For Telecom Equipment Protection Maximum Holding Current: 150 mA Peak Reverse Repetitive Voltage: 200 V Product Dimensions: 4.6 x 3.95 x 2.45 mm Repetitive Peak Forward Blocking Voltage: 200 V Repetitive Peak Off-State Curr... -
newAdded: 03/26/2009Modified: 04/11/2019Price8.00 EUR excl. Tax
2SK1530-Y(F)
Silicon N Channel MOSFET For High-Power Amplifier Application Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 12 A Vgs - Gate-Source Voltage: 20 V Fall Time: 60 ns Rise Ti...
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newAdded: 10/12/2020Modified: 08/25/2025Price9.20 EUR excl. Tax
GAL22V10D-25LPN
High Performance E2CMOS PLD Generic Array Logic™ Number of Macrocells: 10 Maximum Operating Frequency: 83.3 MHz Propagation Delay - Max: 25 ns Operating Supply Voltage: 5 V Operating Supply Current: 90 mA Minimum Operating Tempera... -
newAdded: 04/23/2013Modified: 01/29/2026Price23.00 EUR excl. Tax
MT29F16G08ABABAWP-AIT:B
16GB NAND Flash Memory Technology: FLASH - NAND Memory Size: 16Gbit Memory Organization: 2G x 8 Memory Interface: Parallel Timing Type: Asynchronous Data Bus Width: 8 bit Voltage - Supply: 2.7V to 3.6V Supply Current - Max: 50 m... -
newAdded: 01/25/2016Modified: 08/26/2024Price0.75 EUR excl. Tax
IRL1004PBF
HEXFET N-Channel Power MOSFETs, 40V / 130A / 6.5mOhm Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 130 A Rds On - Drain-Source Resistance: 9 m...
Displaying 25 to 30 (of 1847 top sellers)
