MOSFET 40V / 195A / 1.7mOhm
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 340 A
Rds On - Drain-Source Resistance: 1.4 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 240 nC
Pd - Power Dissipation: 380 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Datenblatt:
IRFB3004PBF.pdf
