FDS6574A

N-Channel MOSFET

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 16 A
Rds On - Drain-Source Resistance: 6 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
Qg - Gate Charge: 105 nC
Pd - Power Dissipation: 2.5 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

Datenblatt: FDS6574A.pdf