STP14NF10

N-channel MOSFET 100 V / 0.115 Ohm / 15 A

Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 15 A
Rds On - Drain-Source Resistance: 130 mOhms
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: 10 V
Qg - Gate Charge: 15.5 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 60 W

Datenblatt: STP14NF10.pdf