STW6NC90Z

N-channel Zener-Protected PowerMESH]III MOSFET 900 V / 2.1 Ω / 5.2 A

VDS Drain-source Voltage (VGS = 0) = 900 V
VDGR Drain-gate Voltage (RGS = 20 kW) = 900 V
VGS Gate- source Voltage = +-25 V
ID Drain Current (continuos) at TC = 25C = 5.2 A
ID Drain Current (continuos) at TC = 100C = 3.3 A
IDM (1) Drain Current (pulsed) = 21 A
PTOT Total Dissipation at TC = 25C = 160 W
Derating Factor = 1.52 W/C
IGS Gate-source Current = 50 mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KW) = 4 KV
dv/dt Peak Diode Recovery voltage slope = 3 V/ns
Tstg Storage Temperature = –65 to 150 C

Datenblatt: STW6NC90Z.pdf