STW20NK50Z

SuperMESH™ Power MOSFET Zener-protected

VDS Drain-source voltage = 500 V
VGS Gate-source voltage = +- 30 V
ID Drain current (continuous) at TC = 25 C = 20 A
ID Drain current (continuous) at TC = 100 C = 12.6 A
IDM Drain current (pulsed) = 68 A
PTOT Total dissipation at TC = 25 C = 190 W
Derating factor = 1.52 W/C
ESD Gate-source human body mode (R=1.5 k?, C=100 pF) = 6 kV
dv/dt Peak diode recovery voltage slope = 4.5 V/ns
Tstg Storage temperature -55 to 150 C

Datenblatt: STW20NK50Z.pdf