SI2325DS-T1-GE3

MOSFET -150V Vds 20V Vgs

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 150 V
Id - Continuous Drain Current: 530 mA
Rds On - Drain-Source Resistance: 1.2 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Qg - Gate Charge: 7.7 nC
Pd - Power Dissipation: 750 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: SI2325DS.pdf