IRFL024ZTRPBF

N-Channel HEXFET® Power MOSFET 55V / 5.1A / 57.5 mOhm

Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 5.1 A
Rds On - Drain-Source Resistance: 57.5 mOhms
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 14 nC
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 2.8 W

Datenblatt: IRFL024Z.pdf