NPN High Voltage Fast Switching Power Transistor 1000V / 15A / 125W
- VCER Collector-emitter voltage (RBE = 10 ?) 1000 V
- VCES Collector-emitter voltage (VBE = 0) 1000 V
- VCEO Collector-emitter voltage (IB = 0) 450 V
- VEBO Emitter-base voltage (IC = 0) 7 V
- IC Collector current 15 A
- ICM Collector peak current 30 A
- ICP Collector peak current non repetitive (tp < 20 us) 55 A
- IB Base current 4 A
- IBM Base peak current 20 A
- PTOT Total dissipation at Tcase = 25 °C 125 W
- TSTG Storage temperature -65 to 150 °C
- TJ Max. operating junction temperature 150 °C
data sheet:
BUV48A.pdf
