8-MBIT (1-MBIT X 8) FlashFile™ MEMORY
- High-Density Symmetrically-Blocked Architecture
- Sixteen 64-Kbyte Blocks
- Extended Cycling Capability
- 100,000 Block Erase Cycles
- 1.6 Million Block Erase Cycles per Chip
- Automated Byte Write and Block Erase
- Command User Interface
- Status Register
- System Performance Enhancements
- RY/BY# Status Output
- Erase Suspend Capability
- Deep Power-Down Mode: 0.20 uA ICC Typical
- Very High-Performance Read: 85 ns Maximum Access Time
- SRAM-Compatible Write Interface
- Hardware Data Protection Feature: Erase/Write Lockout during Power
Transitions
- ETOX(TM) V Nonvolatile Flash Technology: 12 V Byte Write/Block Erase
data sheet:
28F008SA.pdf
