S29AL016D70TFI010

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Cell Type: NOR
Chip Density (bit): 16M
Architecture: Sectored
Boot Block: Yes
Block Organization: Asymmetrical
Location Of Boot Block: Top
Address Bus Width (bit): 21/20
Sector Size: 8Kbyte x 2|16Kbyte x 1|32Kbyte x 1|64Kbyte x 31
Number of Bits/Word (bit): 8/16
Number of Words: 2M/1M
Programmability: Yes
Timing Type: Asynchronous
Max. Access Time (ns): 70
Maximum Erase Time (s): 10/Sector
Maximum Programming Time (ms): 33000/Chip
OE Access Time (ns): 30
Interface Type: Parallel
Minimum Operating Supply Voltage (V): 2.7
Typical Operating Supply Voltage (V): 3|3.3
Maximum Operating Supply Voltage (V): 3.6
Programming Voltage (V): 2.7 to 3.6

Datenblatt: S29AL016D.pdf