IXTK110N30

Power MOSFET

Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 300 V
Id - Continuous Drain Current: 110 A
Pd - Power Dissipation: 730 W
Rds On - Drain-Source Resistance: 26 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

data sheet: IXTK110N30.pdf