SPB16N50C3

N-Channel MOSFET

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 16 A
Rds On - Drain-Source Resistance: 280 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Pd - Power Dissipation: 160 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

data sheet: SPB16N50C3.pdf