SI7852ADP-T1-E3

MOSFET 80V 30A 62.5W

Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 30 A
Rds On - Drain-Source Resistance: 17 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 45 nC
Pd - Power Dissipation: 62.5 W
Minimum Operating Temperature: 55 C
Maximum Operating Temperature: + 150 C