SPD03N50C3ATMA1

MOSFET N-CH 500V 3.2A

Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 3.2 A
Rds On - Drain-Source Resistance: 1.4 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3.9 V
Qg - Gate Charge: 15 nC
Pd - Power Dissipation: 38 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: SPD03N50C3.pdf