TVS Diodes Breakdown Voltage: 16 V Clamping Voltage: 20 V Pppm - Peak Pulse Power Dissipation: 115 W Cd - Diode Capacitance: 9 pF Ipp - Peak Pulse Current: 5 A Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 125 C Datenblatt: ESD203.pdf...

TVS Diodes Polarity: Bidirectional Working Voltage: 22 V Number of Channels: 1 Channel Breakdown Voltage: 9 V Clamping Voltage: 30 V Pppm - Peak Pulse Power Dissipation: 80 W Vesd - Voltage ESD Contact: 16 kV Vesd - Voltage ESD Air Gap: 16 kV Cd - Diode Capacitance: 3.2 pF Ipp - Peak Pulse Current: 3 A Minimum Operating Tem...

MOSFET N-CH 500V 3.2A Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 3.2 A Rds On - Drain-Source Resistance: 1.4 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3.9 V Qg - Gate Charge: 15 nC Pd - Pow...

OptiMOS(TM) 6 Power-Transistor, 100 V Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 75 A Rds On - Drain-Source Resistance: 8.04 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3.3 V Qg - Gate Charge: ...

Counter Shift Registers 8-Bit Shift Reg/Ltch Number of Circuits: 8 Number of Bits: 8 bit Logic Family: 74HC Logic Type: CMOS Number of Input Lines: 3 / 3 Output Type: 3-State Propagation Delay Time: 190 ns, 38 ns, 32 ns Supply Voltage - Max: 6 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 125 C...

MOSFET 80V 30A 62.5W Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current: 30 A Rds On - Drain-Source Resistance: 17 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.5 V Qg - Gate Charge: 45 nC Pd - Power ...