MOSFET N-CH 55V 12A Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 29 mOhms Vgs - Gate-Source Voltage: - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage: 1 V Pd - Power Dissipation: 8 W Minimum Op...

NPN/NPN Resistor-Equipped Double Transistor Configuration: Dual Transistor Polarity: NPN Typical Input Resistor: 0 kOhms Typical Resistor Ratio: 0.213 Collector- Emitter Voltage VCEO Max: 50 V Continuous Collector Current: 100 mA Peak DC Collector Current: 100 mA Minimum Operating Temperature: - 65 C Maximum Operating Temper...

TVS Diodes Breakdown Voltage: 16 V Clamping Voltage: 20 V Pppm - Peak Pulse Power Dissipation: 115 W Cd - Diode Capacitance: 9 pF Ipp - Peak Pulse Current: 5 A Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 125 C data sheet: ESD203.pdf...

TVS Diodes Polarity: Bidirectional Working Voltage: 22 V Number of Channels: 1 Channel Breakdown Voltage: 9 V Clamping Voltage: 30 V Pppm - Peak Pulse Power Dissipation: 80 W Vesd - Voltage ESD Contact: 16 kV Vesd - Voltage ESD Air Gap: 16 kV Cd - Diode Capacitance: 3.2 pF Ipp - Peak Pulse Current: 3 A Minimum Operating Tem...

MOSFET N-CH 500V 3.2A Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 3.2 A Rds On - Drain-Source Resistance: 1.4 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3.9 V Qg - Gate Charge: 15 nC Pd - Pow...

OptiMOS(TM) 6 Power-Transistor, 100 V Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 75 A Rds On - Drain-Source Resistance: 8.04 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3.3 V Qg - Gate Charge: ...